document number: 86096 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.3, 30-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 fast avalanche sinterglass diode byw172d, byw172f, byw172g vishay semiconductors mechanical data case: sod-64 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 858 mg features ? glass passivated junction ? hermetically sealed package ? low reverse current ? soft recovery characteristics ? low forward voltage drop ? high pulse current capability ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? fast rectification diode in s.m.p.s 949588 parts table part type differe ntiation package byw172d v r = 200 v; i fav = 3 a sod-64 byw172f v r = 300 v; i fav = 3 a sod-64 byw172g v r = 400 v; i fav = 3 a sod-64 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byw172d v r = v rrm 200 v byw172f v r = v rrm 300 v byw172g v r = v rrm 400 v peak forward surge current t p = 10 ms, half sine wave i fsm 100 a average forward current i fav 3a non repetitive reverse avalanche energy i (br)r = 1 a e r 20 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 25 k/w on pc board with spacing 25 mm r thja 70 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 3 a v f --1.1v i f = 9 a v f --1.5v reverse current v r = v rrm i r --1a v r = v rrm , t j = 100 c i r - - 20 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - 75 100 ns
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86096 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.3, 30-jul-10 byw172d, byw172f, byw172g vishay semiconductors fast avalanche sinterglass diode typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - max. thermal re sistance vs. lead length fig. 2 - max. forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. reverse curr ent vs. junction temperature fig. 5 - max. reverse power dissipation vs. junction temperature fig. 6 - diode capacitance vs. reverse voltage 0 10 20 30 40 15 10 5 0 202530 r thja - ther. re s i s t. junction/ambient (k/w) l - lead length (mm) 949466 ll t l = con s tant i f - forward current (a) 0.001 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 2.5 v f - forward voltage (v) 16387 t j = 25 c t j = 175 c 16388 i fav - average forward current (a) 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 v r = v rrm half s inewave r thja = 70 k/w pcb: d = 25 mm r thja = 25 k/w i = 10 mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 16389 i r - rever s e current (a) v r = v rrm 0 20 100 40 120 60 140 80 160 180 25 50 75 100 125 150 175 t j - junction temperature (c) 16390 p r - rever s e power di ss ipation (mw) p r -limit at 100 % v r p r -limit at 80 % v r v r = v rrm 0 20 40 60 80 100 120 0.1 1 10 100 v r - rever s e voltage (v) 16391 c d - diode capacitance (pf) f = 1 mhz
byw172d, byw172f, byw172g fast avalanche sinterglass diode vishay semiconductors document number: 86096 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.3, 30-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 7 - thermal response package dimensions in millimeters (inches): sod-64 1 10 100 1000 10 -4 10 2 10 1 10 0 10 2 10 1 10 -0 10 -1 10 -2 10 -3 t p - pul s e length ( s )i frm - repetitive peak forward current (a) 949562 z thp - thermal re s i s t. for pul s e cond. (k/w) t p /t = 0.5 0.2 0.02 0.05 0.01 0.1 v rrm = 600 v r thja = 70 k/w t amb = 25 c 45 c 70 c 100 c cathode identification 4.3 (0.168) max. 1.35 (0.053) max. 4 (0.156) max. sintered glass case sod-64 26(1.014) min. 26 (1.014) min. document-no.: 6.563-5006.4-4 rev. 3 - date: 09.february.2005 94 9587
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